| PART |
Description |
Maker |
| S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
http://
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AM29LV008BB70REIB AM29LV008BT70REIB AM29LV008BB-80 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1米8位）的CMOS 3.0伏，只引导扇区闪
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位米8位）的CMOS 3.0伏，只引导扇区闪
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
HDWR ENDCAP RIGHT FOR SER 3U BLK
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
http://
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV004B AM29LV004BT-90FIB AM29LV004BB-120EC AM2 |
4 megabit CMOS 3.0 volt-only, boot sector flash memory
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩8位）的CMOS 3.0伏，只引导扇区闪
KC series Rotary switches have a no stop option and up to 12 positions and 4 poles
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
http://
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| S29GL032N90TFI040 S29GL032N90TFI042 S29GL032N90TFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
SPANSION
|
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
ATMEL Corporation
|
| AM29LV160DB-70WCE AM29LV160DT-70WCE AM29LV160DB-70 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| EN71PL032A0-70CWP EN71PL032A01 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| EN71NS032A0 EN71NS032A0-9DCWP EN71NS032A0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| EN71NS128C0 EN71NS128C0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
